Doping in Homoepitaxial ZnO Films: Effect of Intentional and Unintentional Impurities on the Optical and the Electrical Properties

Autor:	Guy Feuillet, D. Ehrentraut, Johan Rothman, I. C. Robin, C. Tavares, T. Fukuda, A. Jouini
Rok vydání:	2008
Předmět:	Photoluminescence chemistry business.industry Impurity Doping General Physics and Astronomy Optoelectronics chemistry.chemical_element P type doping Zinc business
Zdroj:	Journal of the Korean Physical Society. 53:2888-2892
ISSN:	0374-4884
DOI:	10.3938/jkps.53.2888
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fc07ef46c0eb71fe6f74ef9d72e3b0c6 https://doi.org/10.3938/jkps.53.2888 Zobrazit plný text záznamu