Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance
| Autor: | Ed Kaminsky, J. L. Garrett, B.J. Edward, Richard Alfred Beaupre, J. Cook, Larry B. Rowland, A.F. Allen, J. Foppes, Ho-Young Cha, Jesse B. Tucker, James W. Kretchmer, A. Vertiatchikh, Goutam Koley, A. P. Zhang |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Solid-state physics business.industry Transistor Doping Analytical chemistry Vanadium chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Secondary ion mass spectrometry chemistry.chemical_compound chemistry law Materials Chemistry Silicon carbide Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 32:437-443 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-003-0174-3 |
| Popis: | The performances of silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs) fabricated on conventional V-doped semi-insulating substrates and new V-free semi-insulating substrates have been compared. The V-free 4H-SiC substrates were confirmed by secondary ion mass spectrometry (SIMS). X-ray topography revealed significantly fewer micropipes and low-angle boundaries in V-free semi-insulating substrates than in conventional V-compensated substrates. Deep-level transient spectroscopy (DLTS) indicated that the spectra signals observed in conventional V-doped substrates were either reduced or disappeared in V-free substrates. The intrinsic deep levels in V-free substrates to make semi-insulating properties were also observed in DLTS spectra. Under various DC and RF stresses, SiC MESFETs fabricated on new V-free semi-insulating substrates showed superior device performance and stability. |
| Databáze: | OpenAIRE |
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