Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation
| Autor: | Shyi-Yuan Wu, Y. H. Ho, Hsu Kai-Chieh, Yu-Hsuan Lin, Tseung-Yuen Tseng, Chih-Chung Yang, Dai-Ying Lee, Hsiang-Lan Lung, Kuang-Hao Chiang, C. Y. Lei, Ming-Hsiu Lee, Yan-Xiao Lin, Feng-Ming Lee, Keh-Chung Wang, Chen-Chien Li, Chin-Yu Chen, Kuen-Yi Chen, Chun-Chang Lu, Cha-Hsin Lin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
education.field_of_study Resistive touchscreen Engineering business.industry Population Electrical engineering 01 natural sciences Stability (probability) Noise (electronics) Electronic Optical and Magnetic Materials Resistive random-access memory Reliability (semiconductor) 0103 physical sciences Electronic engineering Electrical and Electronic Engineering 010306 general physics education business Reset (computing) Random access |
| Zdroj: | IEEE Electron Device Letters. 38:1224-1227 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)—sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WO x ReRAM array reveals that these devices are unstable and their read currents fluctuate with time due to random telegraph noise and structure relaxation. Consequently, even after careful programming, the current distribution can broaden with time and tail bit population grows. Furthermore, ReRAM state is sensitive to temperature and a reference cell made of the same device material must be used. Thus, although the broadening of read current distribution may be tolerated by creating a larger RESET/SET memory window, the current fluctuation still makes it impossible to predict the output of the reference cell, leading to array malfunction. This letter investigates the current (resistance) instability in detail and proposes a reference array with a novel trimming method that can stabilize the reference current level. The proposed reference array has very good dc stress reliability as well as wide-range temperature tracking performance from −40 °C to 85 °C. |
| Databáze: | OpenAIRE |
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