Observation and characterization of near-interface oxide traps with C-V techniques
| Autor: | Marvin H. White, N.L. Cohen, R.E. Paulsen |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Oxide Analytical chemistry Electron Low frequency Capacitance Molecular physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry MOSFET Spontaneous emission Physics::Atomic Physics Electrical and Electronic Engineering Quantum tunnelling Hot-carrier injection |
| Zdroj: | IEEE Transactions on Electron Devices. 42:2004-2009 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.469410 |
| Popis: | The anomalous hump observed in low frequency C-V curves of stressed devices is attributed to near-interface oxide traps, rather than so-called "interface" traps. A low frequency C-V model has been developed to interpret the effect of near-interface oxide traps which communicate with the Si-SiO/sub 2/ interface traps and influence C-V characteristics. At low measurement frequencies, electrons have sufficient time to tunnel from interface traps and fill near-interface oxide traps via a trap-to-trap tunneling mechanism. By varying the measurement frequency, a spatial distribution of near-interface oxide traps is obtained. A consistent near-interface oxide trap distribution has been extracted for a trap-rich SONGS memory transistor using both variable frequency Hi-Lo C-V and charge pumping techniques. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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