Observation of 2D transport in Sn- and In-doped Bi2−xSbxTe3−ySey topological insulator

Autor: Ganesh Bera, Bipul Das, G. R. Turpu, Priyanath Mal, P. Rambabu, C. V. Tomy, Pradip Das
Rok vydání: 2021
Předmět:
Zdroj: Journal of Applied Physics. 129:095702
ISSN: 1089-7550
0021-8979
DOI: 10.1063/5.0035692
Popis: Here we report magnetotransport properties of Bi 2 − x Sb x Te 3 − y Se y (BSTS), In- and Sn-doped BSTS single crystals, grown through modified Bridgeman technique. In- and Sn-doped BSTS single crystals show bulk insulation in temperature dependency resistivity measurements and are confirmed from the observed impurity band mediated three dimensional variable-range hopping behavior at low temperatures over virgin BSTS with metallic bulk. Magnetotransport measurements for BSTS and Sn-doped BSTS reveal a zero field sharp positive cusp and is identified as two dimensional (2D) weak antilocalization (WAL) effect, which is the consequence of π Berry phase of the carriers. For In-doped BSTS single crystals, crossover is identified from WAL to weak localization with field variation at low temperatures and also with an increase in temperature from 2 K. For all the single crystals, phase coherence lengths ( l ϕ) are determined by fitting low field magnetotransport data with Hikami–Larkin–Nagaoka equation. Temperature dependency of phase coherence lengths is described with 2D electron–electron ( e– e) and 2D electron–phonon ( e– p) interactions for virgin and In-doped BSTS single crystals while for Sn-doped BSTS specimen l ϕ ( T ) follows T − 0.53 power law.
Databáze: OpenAIRE