Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
| Autor: | V. V. Budaragin, P. A. Aleksandrov, E. K. Baranova |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry technology industry and agriculture 02 engineering and technology Substrate (electronics) equipment and supplies 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Reliability (semiconductor) Silicon on sapphire 0103 physical sciences Optoelectronics Charge carrier Irradiation 0210 nano-technology business Layer (electronics) Radiation resistance |
| Zdroj: | Semiconductors. 50:1107-1111 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616080054 |
| Popis: | We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer. |
| Databáze: | OpenAIRE |
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