Low-Temperature Solid Phase Epitaxial Regrowth of Silicon for Stacked Static Random Memory Application
| Autor: | Seok Sik Kim, Byoungdeog Choi, Joo Tae Moon, Soon Moon Jung, Hyunho Park, Daehan Yoo, Hanwook Jeong, Kwang Ryul Kim, Yong Hoon Son, Chadong Yeo, Kong Soo Lee |
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| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Materials science Silicon Annealing (metallurgy) Semiconductor device fabrication business.industry General Engineering Nanocrystalline silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Epitaxy chemistry.chemical_compound chemistry Optoelectronics Static random-access memory business Electron backscatter diffraction |
| Zdroj: | Japanese Journal of Applied Physics. 50:01AB06 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.50.01ab06 |
| Popis: | Solid phase epitaxy (SPE) techniques have been studied to realize stacked static random memory (SRAM) devices. Among the candidates including epitaxial lateral overgrowth (ELO) and laser epitaxial growth (LEG) techniques, SPE is the most stable and cost-effective scheme since it is fulfilled by the deposition of amorphous silicon layers and the subsequent low temperature annealing using conventional furnace equipment which has been used for several decades in semiconductor fabrication. We introduced silicon seeds for the epitaxial realignment of amorphous silicon within the contact window by the selective epitaxial growth (SEG) of single-crystalline silicon. The role of process variables associated with channel silicon deposition on SPE was investigated. The efficiency of SPE was quantified by electron back-scatter diffraction (EBSD) measurement, which visualizes the fraction of the orientation in a channel silicon layer. SiH4 ambient during the ramp-up stage in the deposition of amorphous silicon layers showed superior epitaxial realignment to N2 ambient, which was mainly due to the suppression of interfacial layer formation. Electrical characteristics such as on-current distribution and static noise margin indicated SPE to be feasible for high-density stacked SRAM application. |
| Databáze: | OpenAIRE |
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