Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

Autor: Sa Hoang Huynh, Ching Yi Hsu, Yu Chih Hung, Yung Yi Tu, Deepak Anandan, Edward Yi Chang, Chien Ting Wu, Minh Thien Huu Ha, Ramesh Kumar Kakkerla, Hung Wei Yu, Chun Jung Su
Rok vydání: 2017
Předmět:
Zdroj: Journal of Electronic Materials. 47:1071-1079
ISSN: 1543-186X
0361-5235
Popis: High-density (∼ 80/um2) vertical InAs nanowires (NWs) with small diameters (∼ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 × 10−5 atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 μm−2 to 80 μm−2) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (
Databáze: OpenAIRE
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