High-Efficiency Solar Cells from n-Type Cz Silicon
| Autor: | Schultz-Wittmann, O., De Ceuster, D., Turner, A., Crafts, D., Ong, R., Suwito, D., Eggleston, B., Prajapati, V., Kleiman, A., Bhatt, K. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-2eo.2.2 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 1004-1007 Despite significant carrier lifetime advantages, phosphorus doped n-type silicon has not yet replaced boron doped ptype silicon as the preferred base material for crystalline silicon solar cells. The main reasons are the technical difficulty of obtaining well passivated boron doped emitters and a significant spread in the substrate resistivity due to the small segregation coefficient of phosphorus. Hence, new technologies for surface passivation need to be developed as well as designs tolerant of the large substrate resistivity spread. We have successfully developed a manufacturing technology that overcomes these problems and in addition uses Cu plating for cost reduction. The TetraCell technology is alignment-free, compatible with n-type as well as p-type crystalline silicon and can be used in bifacial module designs. So far, 21% cell efficiency has been achieved on 125x125 mm and 156x156 mm wafers. Cells were assembled into modules and accelerated reliability tests were conducted and passed extended IEC 61215 criteria. |
| Databáze: | OpenAIRE |
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