Low noise photosensitive device structures based on porous silicon
| Autor: | V. S. Kasatochkin, E. A. Petrova, S. C. Bayliss, D. G. Yarkin, L. A. Balagurov, A. F. Orlov, S Ya Andrushin |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Fabrication business.industry Orders of magnitude (temperature) Doping Photodetector Dielectric Condensed Matter Physics Porous silicon Electronic Optical and Magnetic Materials Photodiode law.invention Optics law Materials Chemistry Optoelectronics Quantum efficiency Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 47:65-69 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(02)00308-8 |
| Popis: | Photosensitive metal/PS/c-Si structures with oxidized and non-oxidized porous silicon (PS) layers were fabricated. The structures were made from moderately doped p-type c-Si substrates with dielectric windows and “stop” rings prepared using standard c-Si photodiode fabrication technology. Using this technology allowed orders of magnitude decrease the reverse currents of metal/PS/c-Si device structures. The best oxidized and non-oxidized structures have a dark reverse current of 20 nA/cm 2 at 10 V bias and a noise current of 0.16×10 −13 A/Hz 1/2 . Two types of photosensitive structures were obtained––photodiode structures with PS as an antireflection coating/optical window and bipolar phototransistor-like structures. Photodiodes are characterized by a quantum efficiency of 75% while “phototransistors” have a gain up to 11. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect