Solid state reaction in Si–C multilayers induced by ion bombardment
| Autor: | Wolfgang Bolse, F. Harbsmeier, A.-M. Flank |
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| Rok vydání: | 2000 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics X-ray absorption spectroscopy Ion beam Absorption spectroscopy Ion beam mixing Chemistry Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion X-ray absorption fine structure law.invention Ion implantation law 0103 physical sciences Crystallization 0210 nano-technology Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :385-389 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/s0168-583x(99)01169-6 |
| Popis: | In order to investigate ion beam mixing and crystallization in the silicon–carbon system, Si/C multilayers were deposited on Si substrates and irradiated with Kr and Xe ions at temperatures to 873 K. The composition of the layer system as a function of depth before and after irradiation was analyzed by means of Rutherford backscattering spectroscopy (RBS). Changes in short-range order were monitored by X-ray absorption spectroscopy (XAFS). After irradiation at temperatures below 873 K, a disordered network of Si and C atoms forms, where the chemical short-range order is determined primarily by Si–Si bonds. At 873 K, the short-range order resembles that of crystalline SiC and XAFS results clearly indicate that crystallization and build-up of long-range order has initiated. Furthermore, it is demonstrated here that energy deposition by the ion beam is essential for initiating this solid state reaction, which cannot be achieved by thermal treatment only, even at higher temperatures. |
| Databáze: | OpenAIRE |
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