Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET

Autor:	Zheng Zhong-Shan, YI Wan-Bing, Zhang En-xia, Zhang Guoqiang, Fan Kai, Liu Zhongli, Chen Meng, Li Ning, Wang Xi
Rok vydání:	2005
Předmět:	Electron mobility Materials science business.industry Scattering Transistor General Physics and Astronomy chemistry.chemical_element Silicon on insulator Nitrogen Buried oxide law.invention Threshold voltage chemistry law Optoelectronics business Nitriding
Zdroj:	Chinese Physics Letters. 22:654-656
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/22/3/037
Popis:	Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fbacce82f48cb2cf969e2b7805b37ce0 https://doi.org/10.1088/0256-307x/22/3/037 Zobrazit plný text záznamu