Generation lifetime investigation of ion‐damage gettered silicon using MOS structure

Autor:	V. A. Browne, A. G. Nassibian, K. D. Perkins
Rok vydání:	1976
Předmět:	Ion implantation Materials science Ion beam Silicon chemistry Impurity Getter General Physics and Astronomy chemistry.chemical_element Wafer Semiconductor device Carrier lifetime Atomic physics
Zdroj:	Journal of Applied Physics. 47:992-996
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.322692
Popis:	Gettering of undesirable generation impurities by O and Ar implant damage layer has been investigated by transient response of MOS capacitors. One‐half of each Si wafer was masked against the implanting ion beam and comparison was made between the two halves of each wafer by deducing the generation lifetime from the C‐t measurements. The implant dosage was 1016 cm−2 and ion energy 200 keV. The gettering anneal at 1070 °C was also the gate oxidation. The generation lifetime from 1–15 μs of the control half was increased to as high as 200 μs after both O and Ar implants. The results with O were more reproducible than with the Ar‐implanted Si wafers; however, the largest increase in generation lifetime was observed with the Ar getterered wafer. It is proposed that there are generation centers other than the generation impurity centers that cannot be removed by gettering methods.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb9b0e1abcff911ab4834683f98041cd https://doi.org/10.1063/1.322692 Zobrazit plný text záznamu