Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation
| Autor: | Rahul Singh, Rani Medhashree, Anil Kumar, Shweta Kaim, Sumit Kale |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky barrier Gate dielectric Ion current 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Threshold voltage Etching (microfabrication) 0103 physical sciences MOSFET Optoelectronics 0210 nano-technology business Biosensor |
| Zdroj: | Silicon. 14:4053-4062 |
| ISSN: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-021-01191-4 |
| Popis: | In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage (VTH), ION current, IOFF current, Subthreshold Swing (SS), and IDS current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink