Characteristics of 1.3 µm Laser Diode with Carbon-Doped InAlAs Layer

Autor:	Kenji Shimoyama, Nobuhiro Arai, Kaori Kurihara
Rok vydání:	2005
Předmět:	Materials science Laser diode General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Contamination Epitaxy Laser Carbon doping law.invention chemistry law Carbon Layer (electronics) Diode
Zdroj:	Japanese Journal of Applied Physics. 44:L451
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.44.l451
Popis:	InAlGaAs-based laser diodes with carbon doping have been demonstrated. The epitaxial conditions of the carbon doping in InAlAs are critically limited in terms of reduction in oxygen contamination, when carbon concentration is increased. This limitation is more severe at high temperatures. We investigated the most appropriate growth conditions for reducing contamination and realized C-InAlAs with a carrier concentration of 1 ×1018 cm-3 even at a temperature as high as 618°C. We then fabricated a broad-stripe 1.3 µm laser with C-InAlAs and found that this laser shows optical characteristics superior to those with Zn-doped InAlAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb920dae5af93316a871809268afe664 https://doi.org/10.1143/jjap.44.l451 Zobrazit plný text záznamu