Photoelectric Properties of n-ZnSe/p-Si or p+ -GaAs Heterojunctions

Autor:	Hiromi Yajima, Ryutaro Tanaka, Atsuo Takagi, Toshikazu Suda, Shoichi Kurita
Rok vydání:	1980
Předmět:	Quenching Materials science Deep level Infrared Electrical resistivity and conductivity General Engineering Analytical chemistry Valence band General Physics and Astronomy Heterojunction Photoionization Photoelectric effect
Zdroj:	Japanese Journal of Applied Physics. 19:169
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjaps.19s2.169
Popis:	Resistivity as low as ∼0.1 Ωcm has been obtained in ZnSe which has been evaporated onto p-Si and p+ -GaAs. Infrared quenching of the photocapacitance technique has been applied on these samples to obtain the deep level information. The spectrum of the photoionization cross section for holes from Ag(Zn) level to the valence band was obtained and the peak value was 4.2×10-16 cm2 in n-ZnSe/p+GaAs. The deep Ag(Zn) level is located at 0.59 eV from the top of the valence band at 300 K. Two levels of 0.6 and 0.9 eV from the top of the valence band are obtained in the undoped n-ZnSe/p-Si at 300 K. The dominant current transport mechanism is tunneling-recombination via interface states. The doping profile of the Ag(Zn) level was also obtained from the modified C-V method.
Databáze:	OpenAIRE
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