Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

Autor:	C.M. Herzinger, F. G. Celii, B. Johs, Paul G. Snyder, J.A. Woollam, Yung-Chung Kao
Rok vydání:	2002
Předmět:	chemistry.chemical_compound Reflection high-energy electron diffraction Optics Materials science chemistry Ellipsometry business.industry Lattice (order) Indium phosphide business Monitoring and control Indium gallium arsenide Buffer (optical fiber)
Zdroj:	Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
Popis:	Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb7d317106483a0ea6f2c475ac95cf5d https://doi.org/10.1109/iciprm.1994.328177 Zobrazit plný text záznamu