Helicon-Wave-Excited Plasma Treatment of SiOx Films Evaporated on Si Substrate

Autor:	Hideaki Ikoma, Hideaki Nagasawa, Yoshinaga Okamoto, Daisuke Kitayama, Hiroyasu Kitajima
Rok vydání:	1995
Předmět:	Silicon Chemistry General Engineering Oxide Analytical chemistry General Physics and Astronomy chemistry.chemical_element Plasma Evaporation (deposition) chemistry.chemical_compound Helicon X-ray photoelectron spectroscopy Si substrate Excited state
Zdroj:	Japanese Journal of Applied Physics. 34:4747
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.34.4747
Popis:	A new approach to low-temperature growth of Si oxide was discussed in which SiOx was first vacuum-evaporated on Si substrate and then treated in a magnetically excited oxygen plasma (helicon wave) at room temperature. Fairly thick oxide film was obtained. However, the quality of the oxide film was somewhat inferior to those of the oxide grown by direct oxidation of Si with helicon-wave-excited plasma.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb79e28d4d21a21c855bbaa12751c221 https://doi.org/10.1143/jjap.34.4747 Zobrazit plný text záznamu