Interfacial studies of Al2 O3 deposited on 4H-SiC(0001)
| Autor: | Bengt Gunnar Svensson, Spyros Diplas, John F. Watts, Marc Avice, Ola Nilsen, Annett Thøgersen, J. S. Christensen, Steve Hinder, Helmer Fjellvåg, Ulrike Grossner |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry Oxide Mineralogy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Atomic layer deposition chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Materials Chemistry Silicon carbide Aluminium oxide High-resolution transmission electron microscopy Stoichiometry |
| Zdroj: | Surface and Interface Analysis. 40:822-825 |
| ISSN: | 0142-2421 |
| DOI: | 10.1002/sia.2787 |
| Popis: | Al2O3 films deposited on 4H-SiC(0001) by atomic layer deposition (ALD) were characterized by x-ray photoelectron spectroscopy (XPS), and high resolution transmission electron microscopy (HRTEM). The effect of medium and high temperature (873, 1273 K) annealing on samples with oxide thicknesses of 5-8nm and 100-120nm was studied. XPS indicated presence of a thin (~1nm) SiOx layer on the as-grown samples which increased to ~3 nm after annealing above crystallization temperature (1273 K) in Ar atmosphere. Upon annealing the stoichiometry of the interfacial oxide approaches that of SiO2. HRTEM showed that the thickness of the interfacial oxide formed after annealing at 1273 K was not uniform. No significant increase in the thickness of the interfacial oxide, was observed after annealing at 873 K in a N2 (90%) / H2 (10%) atmosphere. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text