Development and evaluation of highly efficient neutral beam source
| Autor: | Gyeong-Jin Min, Joo Tae Moon, Chul Shin, Han-Ku Cho, Ken Tokashiki, Jeon Yun-Kwang, Chang Jin Kang, Jin-Seok Lee, Do-young Kam, Yvette Lee, Do-Haing Lee, Sung-Wook Hwang |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Ion beam business.industry Surfaces and Interfaces General Chemistry Semiconductor device Condensed Matter Physics Ion gun Surfaces Coatings and Films Ion Reflection (mathematics) Ion beam deposition Materials Chemistry Optoelectronics Atomic physics business Plasma processing Beam (structure) |
| Zdroj: | Surface and Coatings Technology. 201:8601-8605 |
| ISSN: | 0257-8972 |
| Popis: | Neutralization process efficiency in a low-angle forward-reflected neutral beam source has been observed. Its charging properties have also been compared against those of a conventional plasma processing tool. Neutralization efficiency, defined as the ratio of the neutral beam flux to the extracted ion beam flux was found to be 99.5%. The neutralization efficiency was very high because the direct contact of the ion beams with grounded metal plates by low-angle forward reflection neutralizes charged ions efficiently. It was also found that the glancing effect of the low-angle reflection does not cause major energy losses. The ion beam energy was mostly preserved (over 95%) even after neutralization. Charging effects by ions passing through the reflector without neutralization appear to have negligible effects on performance degradation of semiconductor devices in comparison to a conventional plasma processing tool. Vertical profiles of poly Si trench etched in the neutral beam source show the beam's high directionality. |
| Databáze: | OpenAIRE |
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