A novel technique for in situ measurements of thin film properties
| Autor: | Konrad Hieber |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
Materials science
Yield (engineering) Metals and Alloys Surfaces and Interfaces Plasma Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electrical resistivity and conductivity Sputtering Materials Chemistry Deposition (phase transition) Current (fluid) Composite material Thin film |
| Zdroj: | Thin Solid Films. 130:125-134 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(85)90302-5 |
| Popis: | It is possible to measure the thickness dependence of resistivity during deposition on a moving substrate in all commercial sputtering systems by means of a small four-point probe resistance measurement arrangement (diameter, 100 mm; height, 5–10 mm) equipped with telemetric data transfer. Since the film properties are uniquely characterized by the thickness dependence of resistivity, for a high production yield of, for example, TaSi films the resistance—thickness relationship of a film whose properties fulfil all specifications must be reproduced by dynamic control of the deposition parameters. The influence of the plasma on the resistance measurements can be determined by using at least two different testing currents. The real film resistance and the current injected into the growing film can be calculated from the two values of resistance obtained. The injected current depends on the target power. It now appears to be possible to control the growth rate, the film thickness and the composition of metallic alloy films during deposition (co-sputtering). |
| Databáze: | OpenAIRE |
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