ZrO2 Monolayer as a Removable Etch Stop Layer for Thermal Al2O3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum
| Autor: | Omid Zandi, David R. Zywotko, Jacques Faguet, Paul R. Abel, Steven M. George |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Chemical Engineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Hydrogen fluoride 01 natural sciences 0104 chemical sciences chemistry.chemical_compound Chemical engineering chemistry Etching (microfabrication) Monolayer Thermal Materials Chemistry 0210 nano-technology Layer (electronics) |
| Zdroj: | Chemistry of Materials. 32:10055-10065 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/acs.chemmater.0c03335 |
| Popis: | A ZrO2 monolayer was demonstrated as a removable etch stop layer (ESL) for thermal Al2O3 atomic layer etching (ALE) using HF and Al(CH3)3 (trimethylaluminum (TMA)) as the reactants. The ZrO2 ESL wa... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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