Properties of GaN Film Grown on AlN/PSS Template by Hydride Vapor Phase Epitaxy
| Autor: | Jin-Ho Kim, Hae-Yong Lee, Young-Jin Lee, Hoki Son, Mi-Jai Lee, Jonghee Hwang, Dae-Woo Jeon |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Laser diode business.industry Gallium nitride 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences law.invention chemistry.chemical_compound Full width at half maximum chemistry law 0103 physical sciences Sapphire Optoelectronics 0210 nano-technology business Layer (electronics) Light-emitting diode |
| Zdroj: | Journal of the Korean Institute of Electrical and Electronic Material Engineers. 29:348-352 |
| ISSN: | 1226-7945 |
| DOI: | 10.4313/jkem.2016.29.6.348 |
| Popis: | LumiGNtech Co., SK Techno Park, Gwangmyeong 14322, Korea(Received March 31, 2016; Revised May 24, 2016; Accepted May 24, 2016) Abstract: In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ω-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.Keywords: GaN, PSS, HVPE, Refractive index ./0 갈륨 나이트라이드 (gallium nitride, GaN)는 1990년 이후로 꾸준히 많이 연구가 이루어지고 있는 반도체 재료이다. 광전자기기인 레이저 다이오드 (laser diode)와 발광 다이오드 (light emitting diode)에 적합한 재료이다. 3.4 eV의 넓은 밴드갭 에너지, 높은 열안정성, 열전도도의 물성을 가지고 있어 고온에서 작 |
| Databáze: | OpenAIRE |
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