Time-of-Flight Secondary Ion Mass Spectrometry profiling for arsenic in silicon dioxide matrix

Autor:	Si Ping Zhao, Yun Wang, Zhi Qiang Mo, Han Wei Teo
Rok vydání:	2016
Předmět:	Secondary ion mass spectrometry Time of flight Analyte chemistry.chemical_compound chemistry Silicon dioxide Ion yield Analytical chemistry chemistry.chemical_element Silicon matrix Arsenic
Zdroj:	2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Popis:	This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher than 28Si 75As in silicon dioxide matrix. The average RSF for 75As in silicon dioxide was determined to be 5.62E20 and lower variation of 75As RSF was observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb49e3d0f91543869632fd3608a85af5 https://doi.org/10.1109/ipfa.2016.7564258 Zobrazit plný text záznamu