Investigating the interlayer electron transport and its influence on the whole electric properties of black phosphorus
| Autor: | Yufei Zhang, Yuyan Wang, Jiacheng Sun, Bensong Wan, Shaoqiang Guo, Caofeng Pan, Junying Zhang |
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| Rok vydání: | 2019 |
| Předmět: |
Multidisciplinary
Materials science Field (physics) Band gap business.industry Transistor Conductance 010502 geochemistry & geophysics 01 natural sciences law.invention law Electric field Vertical direction Optoelectronics Field-effect transistor Resistor business 0105 earth and related environmental sciences |
| Zdroj: | Science Bulletin. 64:254-260 |
| ISSN: | 2095-9273 |
| DOI: | 10.1016/j.scib.2018.11.026 |
| Popis: | Two-dimensional (2D) nanomaterials have attracted great attention in next generation electronic and optoelectronic technologies due to the unique layered structure and excellent physical and chemical properties. However, the mechanism of transmission along the vertical direction of 2D semiconductor materials has not been investigated. Here, we use first-principles calculations to explore the bandgap energies along different directions, and fabricate a vertical, a lateral and a mixture-structured black phosphorus field effect transistor (BPFET) to study the electrical characteristics along different directions under variable temperatures. The variable temperature test indicates that the mixture-structured device performs more like a lateral device, while the conductance along the vertical direction is hard to be tuned by temperature and electrical field. The unchanged conductance under electric field and variable temperatures allows the vertical device to act as a fixed resistor, promising possible application for the prospective electronic and optoelectronic devices. |
| Databáze: | OpenAIRE |
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