Amorphous phase formation in Ni3B by low‐temperature deuterium implantation

Autor: R. Danielou, Lionel Thomé, E. Ligeon, J. Fontenille, F. Pons
Rok vydání: 1988
Předmět:
Zdroj: Journal of Applied Physics. 63:722-725
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.340063
Popis: The amorphous phase formation in Ni3B single crystals implanted at 15 K with deuterium ions is studied via in situ Rutherford backscattering and channeling experiments, and the lattice site of implanted deuterium was determined by using the D(3He,p)4He nuclear reaction. The amorphization kinetics is found to present a sigmoidal shape, indicating that amorphization results from a defect‐accumulation mechanism. At D fluences below the amorphization threshold, implanted D atoms are located in interstitial sites of the Ni3B orthorhombic structure, while they are trapped in the strained region between amorphous clusters as soon as amorphization occurs.
Databáze: OpenAIRE