| Autor: |
Jan Vobecky, Umamaheswara Vemulapati, Tobias Wikstrom, Munaf Rahimo, Thomas Stiasny, Martin Arnold, Bjorn Backlund |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). |
| Popis: |
In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and recent prototype experimental results as well as novel structures and future trends of the IGCT technology are presented. This will provide system designers with a comprehensive overview of the potentials possible with this device concept. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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