Scalable T-Gate Aligned Gr–WS2–Gr Radio-Frequency Field-Effect Transistors

Autor:	Kazu Suenaga, Chun Hao Ma, Po-Wen Chiu, Chao-Hui Yeh, Yung-Chang Lin, Zheng-Yong Liang, Ying-Hao Chu
Rok vydání:	2020
Předmět:	Materials science business.industry Transistor Electronic Optical and Magnetic Materials law.invention Nanoelectronics law Scalability Materials Chemistry Electrochemistry Optoelectronics Field-effect transistor Radio frequency business
Zdroj:	ACS Applied Electronic Materials. 2:3898-3905
ISSN:	2637-6113
Popis:	Gigahertz field-effect transistors (FETs) have been the imperative need for the development of nanoelectronics based on atomically thin transition metal dichalcogenides (TMDs). Yet, WS2 FETs workin...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fb29a13be596f97955b1467e99423815 https://doi.org/10.1021/acsaelm.0c00742 Zobrazit plný text záznamu