Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature
| Autor: | Day Shan Liu, Chun−Ching Wu, Chun−Hsing Lin, Bing−Wen Huang |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Band gap Doping General Engineering Oxide General Physics and Astronomy Amorphous solid Indium tin oxide chemistry.chemical_compound Microcrystalline Absorption edge chemistry Electrical resistivity and conductivity Optoelectronics business |
| Zdroj: | Japanese Journal of Applied Physics. 45:3526-3530 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.45.3526 |
| Popis: | The relationship between the electrical, optical and material properties of transparent and conductive oxide films prepared by rf cosputtering indium–tin oxide (ITO) and zinc oxide (ZnO) targets has been investigated. The evolution from polycrystalline structure of an undoped ITO film to an amorphous-like ZnkIn2O3+k structure obtained from ZnO-doped ITO films is found to be responsible for the marked improvement in the electrical properties. A low surface roughness is also achieved from this amorphous structure. However, both electrical property and surface uniformity begin to degrade with increasing rf cosputtering power on the ZnO target that corresponds to a high atomic ratio of Zn/(Zn + In). The degradation mechanism is attributed to the appearance of a microcrystalline ZnO structure that is detrimental to the film resistivity. Furthermore, optical band gap calculated from the absorption edge of such cosputtered films also decreases with increasing ZnO impurities. |
| Databáze: | OpenAIRE |
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