Reflection of millimeter-range electromagnetic radiation from slightly doped gallium arsenide
Autor: | V. D. Tsiporukha, D. I. Bilenko, A. E. Lun'kov, V. N. Yazikov |
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Rok vydání: | 1970 |
Předmět: |
Physics
business.industry Phonon Scattering General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electromagnetic radiation Gallium arsenide chemistry.chemical_compound Wavelength Optics chemistry Reflection (physics) Reflection coefficient Atomic physics business Dimensionless quantity |
Zdroj: | Soviet Physics Journal. 13:841-844 |
ISSN: | 1573-9228 0038-5697 |
DOI: | 10.1007/bf01879824 |
Popis: | The reflection coefficient R and the phase angleϕ of the reflected electromagnetic wave are calculated with an account of various scattering mechanisms (scattering by ionized impurity and by optical phonons) for wavelengths in the 2-mm range at room temperature. Simplified semiclassical equations for the complex reflection coefficient R* are shown to be valid. The equations are used to calculate R and ϕ for n-type GaAs as functions of the dimensionless frequencies y = ω/ωp and ωpτ. The experimental values of R and ϕ for n-type GaAs single crystals at 2.2 mm agree with the theoretical values, within the experimental error. The concentrations and mobilities determined from the experimental data agree well with the results of Hall measurements. |
Databáze: | OpenAIRE |
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