Controlled growth and photoconductive properties of hexagonal SnS2 nanoflakes with mesa-shaped atomic steps
| Autor: | Lianbo Ma, Zhong Jin, Jie Liu, Yi Hu, Changzeng Yan, Hongfei Zhu, Guoyin Zhu, Tao Chen, Xiaoqi Wang, Hongling Lv, Jia Liang, Renpeng Chen, Xin Yuan |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
chemistry.chemical_element Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry Epitaxy 01 natural sciences symbols.namesake Monolayer General Materials Science Electrical and Electronic Engineering business.industry Photoconductivity Dangling bond 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics 0104 chemical sciences chemistry symbols Optoelectronics Mica 0210 nano-technology Tin business Raman spectroscopy |
| Zdroj: | Nano Research. 10:1434-1447 |
| ISSN: | 1998-0000 1998-0124 |
| DOI: | 10.1007/s12274-017-1525-3 |
| Popis: | We demonstrated the controlled growth of two-dimensional (2D) hexagonal tin disulfide (SnS2) nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus or step pyramids. The SnS2 nanoflakes were grown on mica substrates via an atmospheric-pressure chemical vapor deposition process using tin monosulfide and sulfur powder as precursors. Atomic force microscopy (AFM), electron microscopy, and Raman characterizations were performed to investigate the structural features, and a sequential layer-wise epitaxial growth mechanism was revealed. In addition, systematic Raman characterizations were performed on individual SnS2 nanoflakes with a wide range of thicknesses (1–100 nm), indicating that the A1g peak intensity and Raman shifts were closely related to the thickness of the SnS2 nanoflakes. Moreover, photoconductive AFM was performed on the monolayer-stepped SnS2 nanoflakes, revealing that the flat surface and the edges of the SnS2 atomic steps had different electrical conductive properties and photoconductive behaviors. This is ascribed to the dangling bonds and defects at the atomic step edges, which caused a height difference of the Schottky barriers formed at the interfaces between the PtIr-coated AFM tip and the step edges or the flat surface of the SnS2 nanoflakes. The 2D SnS2 crystals with regular monolayer atomic steps and fast photoresponsivity are promising for novel applications in photodetectors and integrated optoelectronic circuits. |
| Databáze: | OpenAIRE |
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