C–V profiling of ultra-shallow junctions using step-like background profiles
| Autor: | M. Popadic, F. Sarubbi, Cuiqin Xu, Lis K. Nanver, Vladimir Milovanovic |
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| Rok vydání: | 2010 |
| Předmět: |
Accuracy and precision
Fabrication Materials science Silicon business.industry Doping Analytical chemistry chemistry.chemical_element Schottky diode Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials BORO chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Boron |
| Zdroj: | Solid-State Electronics. 54:890-896 |
| ISSN: | 0038-1101 |
| Popis: | A novel C–V profiling method that enables profiling of ultra-shallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C–V characteristic that is obtained with a step-like or some other abruptly changing background profile. The method is theoretically described and confirmed by MEDICI simulations. Experimental use of the method requires the fabrication of both a p–n and a Schottky diode with identical background profiles. Here, a step-like background As profile and an ultra-shallow and ultra-abrupt p + junction were achieved by Si epitaxy and pure boron RPCVD, respectively. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of about 2.5 nm/dec were fabricated and measured. The way to create an optimal experimental situation in terms of measurement range and accuracy is discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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