Designing reliable high-power limiter circuits with GaAs PIN diodes
Autor: | D.G. Smith, D.D. Heston, K. Decker, J. Heston, B. Heimer |
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Rok vydání: | 2003 |
Předmět: | |
Zdroj: | 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278). |
DOI: | 10.1109/mwsym.2002.1011885 |
Popis: | This paper presents the latest GaAs PIN diode rf reliability data. An acceleration factor predicting lifetime as a function of diode perimeter and rf power level is proposed. Power handling measurements of an improved PIN diode layout that provides superior performance for both power handling and small signal loss/bandwidth is presented. Finally the design principles for a high power limiter will be reviewed. |
Databáze: | OpenAIRE |
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