Alternative ohmic contact systems to n-InP
| Autor: | W.O. Barnard, F.D. Auret, C.W. Louw, Johan B. Malherbe, G. Myburg |
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| Rok vydání: | 1993 |
| Předmět: |
Auger electron spectroscopy
Materials science Annealing (metallurgy) Contact resistance Metallurgy Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Microstructure Surfaces Coatings and Films Transition metal Sputtering Cathode sputtering Ohmic contact |
| Zdroj: | Applied Surface Science. :515-519 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(93)90572-s |
| Popis: | In this study specific contact resistance (rc), Auger electron spectroscopy and morphology results are reported for Au/Pt/Ti, Au/Ni/Ti and Au/Ru/Ti ohmic contact systems to n-InP. These contacts were fabricated on Ar+ sputtered and chemically etched InP surfaces. Irrespective of the pre-metallization treatment, minimum rc values of 1×10−5 Ω·cm2 were obtained afte annealing at 450°C. It was found that the Ar+ sputtering step is unnecessary in the processing of ohmic contacts to InP. The Au/Ru/Ti contact combination revealed the best surface morphology after annealing, although the morphologies of all three systems were excellent in comparison with the Au/Ni/Au-Ge contact scheme. |
| Databáze: | OpenAIRE |
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