Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays

Autor:	J. D. Bensen, G. M. Venzor, L. T. Pham, Scott M. Johnson, J. B. Varesi, E. A. Patten, Andrew J. Stoltz, Edward P. Smith, John H. Dinan, W. A. Radford, P. M. Goetz
Rok vydání:	2003
Předmět:	Fabrication Chemistry business.industry Detector Photodetector Condensed Matter Physics Electronic Optical and Magnetic Materials Optics Etching (microfabrication) Trench Materials Chemistry Infrared detector Dry etching Electrical and Electronic Engineering business Diode
Zdroj:	Journal of Electronic Materials. 32:821-826
ISSN:	1543-186X 0361-5235
Popis:	A combination of mechanical experiments and fabrication of very-long-wavelength infrared (VLWIR) HgCdTe-infrared detectors has been used to investigate the interaction between various unit-cell design and dry-etch process variables on final unit-cell dimensions and detector performance. Etch rate, which determines the process time required to achieve a specified etch depth, was found to be a function of both the trench width opening used to delineate an individual detector element in a focal-plane array (FPA) and the mesa profile observed during etching. Current-voltage (I-V) probe data at 78 K demonstrated the successful fabrication of 30 µm unit-cell, VLWIR-HgCdTe diodes with mesa delineation performed by dry etching. The breakdown performance of these diodes is sensitive to trench width and dry-etch process time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fae6cc0d98c818133c08b5836e5ef130 https://doi.org/10.1007/s11664-003-0077-3 Zobrazit plný text záznamu Full text from SpringerLink