Material removal rate in polishing anisotropic monocrystalline materials for optoelectronics
| Autor: | S. V. Kovalev, A. G. Vetrov, O. Yu. Filatov, V. I. Sidorko, Yu. D. Filatov |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Debris particle Materials science business.industry Polishing Material removal 02 engineering and technology 01 natural sciences Inorganic Chemistry Monocrystalline silicon 020303 mechanical engineering & transports 0203 mechanical engineering Volume (thermodynamics) 0103 physical sciences Sapphire Optoelectronics General Materials Science Anisotropy business Dispersion (chemistry) |
| Zdroj: | Journal of Superhard Materials. 38:123-131 |
| ISSN: | 1934-9408 1063-4576 |
| DOI: | 10.3103/s1063457616020064 |
| Popis: | Based on investigations of the mechanism of precision surface formation in workpieces of anisotropic monocrystalline materials for optoelectronics, a generalized model of material removal in polishing with suspensions of polishing powders has been constructed. The removal rate in polishing sapphire planes of different crystallographic orientations has been found to grow in the series m < c < a < r with increasing volume, surface area, and most probable size of debris particles as well as with energy of dispersion of material from the face being polished. |
| Databáze: | OpenAIRE |
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