| Popis: |
As the semiconductor device architecture develops, from planar field-effect transistor (FET) to FinFET and toward gate all around (GAA), it is more needed to measure 3D structure sidewall precisely. Here, we present a 3D-atomic force microscopy (3D-AFM) by Park Systems Corp., a powerful 3D metrology tool to measure SWR of vertical and undercut structures. First, we measured 3 different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. And all analysis was performed using a novel algorithm including auto flattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The result suggests that our 3D-AFM based on tilted Z scanner enabled an advanced methodology for automated 3D measurement and analysis. |
