Analysis and performance comparison of medium concentration Si and GaAs/Ge cells

Autor:	D.D. Krut, Gregory S. Glenn
Rok vydání:	2002
Předmět:	Fabrication Materials science Silicon business.industry Photovoltaic system chemistry.chemical_element Germanium Epitaxy Electrical contacts Gallium arsenide chemistry.chemical_compound Semiconductor chemistry Optoelectronics business
Zdroj:	Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
Popis:	Concentrator silicon and GaAs-Ge solar cells have been fabricated and tested by Spectrolab. In this paper, the present the results of their work as well as the economic analyses demonstrating applicability of each cell type. Si top/bottom contact solar cells can be commercially produced to perform with efficiencies exceeding 20% under concentration around 200X AM1.5. For GaAs/Ge solar cells, consisting of epitaxially grown GaAs layers on Ge substrates, possible production efficiencies can exceed 26%. An economic comparison of the two technologies is also reported. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::faacccf64a8247dda8c7f95f2a4029dc https://doi.org/10.1109/pvsc.1993.346950 Zobrazit plný text záznamu