Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures
Autor: | Mirko Bernardoni, Michael Nelhiebel, Florian Peter Pribahsnik, Andreas Lindemann, M. Mataln |
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Rok vydání: | 2018 |
Předmět: |
Materials science
Multiphysics 020101 civil engineering Gallium nitride 02 engineering and technology Displacement (vector) 0201 civil engineering law.invention Harmonic analysis chemistry.chemical_compound 0203 mechanical engineering law Electrical and Electronic Engineering Safety Risk Reliability and Quality business.industry Resonance Condensed Matter Physics Piezoelectricity Atomic and Molecular Physics and Optics Finite element method Surfaces Coatings and Films Electronic Optical and Magnetic Materials Capacitor 020303 mechanical engineering & transports chemistry Optoelectronics business |
Zdroj: | Microelectronics Reliability. :389-392 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2018.07.042 |
Popis: | Due to the intrinsic piezoelectric nature of Gallium Nitride (GaN), devices manufactured with such technology are in principle prone to experience electro-mechanically induced resonance phenomena under operating conditions. In this paper, we present the thorough approach combining simulation and experiment to study the occurrence and implications of such electro-mechanical resonances. A simple GaN-on-Si capacitor test structure was fabricated and electrically excited in order to activate the mechanical eigenmodes of the assembly which are measured by a Laser-Doppler-Scanning-Vibrometer. A multiphysics Finite Element (FE) model of the tested structures was built in order to perform harmonic analysis and to quantitatively study the effects of damping on displacement, stress and strain. A mathematical comparison on different aspects between the model and measurements show good agreement. This successfully verifies the methodology to model the dynamic resonance behaviour of piezoelectric active chips. |
Databáze: | OpenAIRE |
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