Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications
| Autor: | D. Godfrey, D. Nirmal, L. Arivazhagan, Brigis Roy, Yu-Lin Chen, Tien-Han Yu, Wen-Kuan Yeh, D. Godwinraj |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Wide-bandgap semiconductor 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Polarization (waves) 01 natural sciences Source field Logic gate Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Breakdown voltage business Technology CAD |
| Zdroj: | 2020 5th International Conference on Devices, Circuits and Systems (ICDCS). |
| Popis: | Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated. Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The investigation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). Various physical models such as mobility, polarization and recombination models are used to tune the simulation. It is observed that breakdown voltage enhances source field plate length. It is also observed that VBR shows less dependency for LFP > 4µm. |
| Databáze: | OpenAIRE |
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