Properties of Semipolar GaN Grown on a Si(100) Substrate
| Autor: | N. V. Seredova, S. N. Rodin, A. V. Solomnikova, T. A. Orlova, E. Konenkova, V. K. Smirnov, D. S. Kibalov, V. N. Bessolov, M. P. Shcheglov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Nanostructure Materials science business.industry Exciton Stacking 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences Optoelectronics 0210 nano-technology Luminescence business Layer (electronics) Deposition (law) Bar (unit) |
| Zdroj: | Semiconductors. 53:989-992 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 $$\bar {1}$$ 2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10 $$\bar {1}$$ 1) layers with a full-width at half-maximum of the diffraction-curve of ωθ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSFS-I1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons. |
| Databáze: | OpenAIRE |
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