| Autor: |
P.A. Macdonald, Takyiu Liu, M. Hafizi, T.C. Cisco, David B. Rensch |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4). |
| DOI: |
10.1109/mwsym.1994.335513 |
| Popis: |
We report on the microwave performance of InP-based double heterojunction bipolar transistors (DHBT) for X-band and C-band applications with power cells operating at an output power greater than 2 W. Our power performance characterization indicated a combination of high power density and high efficiency at both 4.5 and 9 GHz. At 4.5 GHz we measured over 2 W output power (4.3 W/mm power density) and a peak power-added-efficiency (PAE) of 60%. AT 9 GHz the peak measured power was over 1 W (5 W/mm) and the peak PAE was 60%. These are the first reports of substantial microwave power performance in this new device technology based on the InP material system. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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