A flux analysis of multiple junction solar cells: The general equations, with computations for an n-CdS/n-GaAs photoanode

Autor:	Steven Hinckley, D. Haneman, J.F. McCann
Rok vydání:	1986
Předmět:	business.industry Chemistry education technology industry and agriculture General Engineering Heterojunction Photoelectrochemical cell equipment and supplies Solar energy law.invention Optics Semiconductor Depletion region law Solar cell Optoelectronics Thin film business Ohmic contact
Zdroj:	Solar Cells. 17:317-342
ISSN:	0379-6787
DOI:	10.1016/0379-6787(86)90021-9
Popis:	General analytical expressions for the photocurrent-voltage characteristics of thin-film multiple semiconductor junction/liquid or metal junction solar cells are derived using the flux method. The approximation of making the depletion layer an excess minority carrier sink is not used, and the model includes the effects of recombination of excess minority carriers within the semiconductor and at the semiconductor heterojunction. The effects of the front-layer semiconductor thickness are examined for an n-n heterojunction solar cell. The effect of reflection of minority carriers at the ohmic contact is also considered. An optimum front-layer thickness is found for an n-CdS/n-GaAs photoanode, and the effects of material parameters on the performance can now be predicted.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fa720f307ea6e117b9ca9627e307fb04 https://doi.org/10.1016/0379-6787(86)90021-9 Zobrazit plný text záznamu