Highly efficient UV-Ozone treatment for IAZO active layer to facilitate the low temperature fabrication of high performance thin film transistors
| Autor: | Lin Han, Weidong Xu, Jianfeng Jiang, Xianjin Feng |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Fabrication Materials science business.industry Process Chemistry and Technology chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Active layer Threshold voltage Root mean square Uv ozone chemistry Thin-film transistor 0103 physical sciences Materials Chemistry Ceramics and Composites Optoelectronics 0210 nano-technology business Saturation (magnetic) |
| Zdroj: | Ceramics International. 46:17295-17299 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2020.04.016 |
| Popis: | We had found for the first time that short-time UV-ozone treatment can effectively regulate the electrical properties of sputtered InAlZnO (IAZO) films, and we successfully prepared high performance IAZO thin film transistors (TFTs) without thermal annealing. After the UV-ozone treatment, all IAZO films exhibited very flat surface topographies with small root mean square roughnesses (0.167–0.195 nm). With the increase of UV-ozone treatment time, the oxygen vacancies and consequently the carrier concentration of the films decreased monotonically, while the highest Hall mobility of 29.4 cm2/V was obtained for the 5 min-treated film. The IAZO TFT with 5 min UV-ozone treatment exhibited the best overall electrical properties with a high saturation mobility of 8.76 cm2/V, a high on-off current ratio of 6.44 × 108 and a low subthreshold swing of 0.73 V/dec. Meanwhile, it also displayed good negative bias illumination stability with a small shift of −0.51 V observed in threshold voltage after the device being stressed for 3000 s. |
| Databáze: | OpenAIRE |
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