Advanced passivation of laser-doped and grooved solar cells
| Autor: | David N. R. Payne, Chee Mun Chong, Ly Mai, Alison Ciesla, Brett Hallam, Zhengrong Shi, Ziv Hameiri, Stuart Wenham, Jingjia Ji, Sisi Wang, Catherine Chan |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Passivation Silicon chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention chemistry.chemical_compound law Diffusion (business) Common emitter Renewable Energy Sustainability and the Environment business.industry Open-circuit voltage Doping 021001 nanoscience & nanotechnology Laser 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Silicon nitride Optoelectronics 0210 nano-technology business |
| Zdroj: | Solar Energy Materials and Solar Cells. 193:403-410 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2019.01.025 |
| Popis: | In this work, we investigate the use of advanced hydrogenation and low-temperature diffusion processes (a 3 h 700 °C process after emitter diffusion) for the electrical neutralization of laser-induced defects for laser doped and grooved solar cells. Despite the laser doping and grooving (LDG) process being performed before silicon nitride passivation to avoid thermal expansion mismatch between the silicon and the silicon nitride layer, some crystallographic defects are still formed during the process. The application of a low-temperature diffusion process increases implied open circuit voltages by 14 mV, potentially due to phosphorus diffusion of dislocated regions induced during laser processing. Laser hydrogenation is shown to be capable of passivating the majority of the remaining laser-induced defects. Over 1% absolute improvement in efficiency is achieved on cells with a full area aluminum back surface field. Preliminary results with minimal optimization demonstrate efficiencies of over 19% with a full area Al back contact cell. The potential to achieve much higher voltages when used with a passivated rear is also demonstrated. |
| Databáze: | OpenAIRE |
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