GaN for x-ray detection
| Autor: | Jean-Luc Reverchon, Jean-Yves Duboz, Andreas D. Wieck, Tino Zimmerling, Marguerite Laügt, David Schenk, Bernard Beaumont |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 92:263501 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | The potential of GaN based materials for x-ray detection is investigated. The absorption coefficient in GaN is measured as a function of photon energy between 6 and 40keV. Metal-semiconductor-metal photodetectors are fabricated and characterized. The response dependence on bias, the temporal dynamics, and the response dependence on detector geometry all together point toward a mixing of photovoltaic and photoconductive effects. Thanks to a large photoconductive gain, the detector has a decent responsivity at the expense of a large response time. |
| Databáze: | OpenAIRE |
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