Identification of transport and recombination paths in homo- and heterojunction silicon solar cells by electrically detected magnetic resonance
| Autor: | S von Aichberger, Walther Fuhs, K. Lips, R. Müller, P. Kanschat |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Photocurrent
Materials science Silicon business.industry Doping Dangling bond chemistry.chemical_element Heterojunction Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Amorphous solid chemistry Materials Chemistry Ceramics and Composites Optoelectronics Crystalline silicon business Common emitter |
| Zdroj: | Journal of Non-Crystalline Solids. :1124-1128 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(99)00915-1 |
| Popis: | We report on a first study of electrically detected magnetic resonance (EDMR) on crystalline silicon (c-Si) solar cells with gas-phase deposited n-type amorphous (a-Si:H) and c-Si emitters (epi-Si). The spectra of epi-Si emitter cells have at least five EDMR signals observed only under illumination with g values ranging from 1.99 to 2.01. The signals have two-fold symmetry and resemble shallow donors and P b0 -like centers known from the Si/SiO 2 interfaces. In contrast, the EDMR signals in the spectra of the a-Si:H/c-Si cells are observed in the dark as well as in the photocurrent and stem from the a-Si:H layer. They can be identified with either recombination through neutral dangling bonds or hopping of electrons and holes in band tail states of the emitter layer. The hopping signals show a frequency dependence not observed before which is discussed in terms of a modified model for spin-dependent hopping in doped a-Si:H. |
| Databáze: | OpenAIRE |
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