Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

Autor:	A.A. Andreev, A.V. Zherzdev, Issai Shlimak, A. I. Kosarev, K. V. Kougia
Rok vydání:	1985
Předmět:	Photoluminescence Materials science Silicon business.industry Photoconductivity chemistry.chemical_element Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Amorphous solid chemistry Radiative transfer Optoelectronics business Recombination
Zdroj:	physica status solidi (b). 127:273-278
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2221270127
Popis:	Concomitant simultaneous investigations of both, photoluminescence (PL) and photoconductivity (PC) decay from steady-state levels are carried out for the first time under the same conditions for the same a-Si:H samples. It is found that there is no competition between radiative and non-radiative recombination channels for excess carriers. A general model of tunnel distant-pair recombination based on the experimental data is proposed for explanation of both, PL and PC. [Russian Text Ignored].
Databáze:	OpenAIRE
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