Photoionization cross section of electron traps in thin oxynitride films of metal‐oxynitride‐oxide‐silicon devices
| Autor: | Vik J. Kapoor, Dan Xu |
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| Rok vydání: | 1989 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 65:1217-1222 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.343012 |
| Popis: | The flat‐band voltage monitored photodepopulation technique in combination with photoinjection was used to investigate the first‐order kinetics of a trap emptying in low‐pressure chemical vapor deposited thin films of silicon oxynitride (SiOx Ny ) of metal‐oxynitride‐oxide‐silicon devices. An effective photoionization cross section associated with deep electron traps was determined to be 4.9–18.9×10−19 cm2 over the photon energy range of 2.06–3.1 eV for oxynitride films containing 7–17 at. % of oxygen. At a fixed oxygen concentration, the photoionization cross section decreased from 8.3×10−19 to 4.9×10−19 cm2 as the photon energy was lowered from 2.06 to 2.48 eV. However, the photoionization cross section at a fixed photon energy within this range showed an average decrease of 18% for a 10% increase in the amount of oxygen content in the oxynitride film. The photoionization cross section increased from 4.9×10−19 to 18.9×10−19 cm2 as the photon energy was increased from 2.48 to 3.1 eV. Over this higher pho... |
| Databáze: | OpenAIRE |
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