First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO Gate Dielectric

Autor:	William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:6072-6077
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2022.3208847
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::fa16de1a1a97238c30302c1ff2f45cfc https://doi.org/10.1109/ted.2022.3208847 Zobrazit plný text záznamu